Transistors

Power MOS FET series (TSMT package)
for system power supply and load switch applications

— Low on-resistance
— Higher power dissipation package
— Thin package
— High ESD protection

Applications: DC/DC converters and load switches

These MOS FETs in TSMT packages offer high power dissipation packaging, high ESD protection and high current capability. They are ideal for mobile phone applications with 2.5V and 4V driving voltages. MOS FETs with Schottky barrier diodes are also available.

*Typical value at Vgs=4.5V. *Typical value at Vgs/Id=4.5V/Id (max).

Power MOS FET series (SOP8 package)
for DC/DC converter and inverter applications

— Low on-state resistance
— High ESD protection
— Higher power dissipation package

Applications: Inverters, DC/DC converters and load switches

These power MOS FETs in SOP8 packages are high performance transistors with low on-resistance, high-speed switching and high ESD protection. Typical values include single 30V, 14A and 4.9m ohm for Nch. The product line provides Nch+Nch and Nch+Pch products that are ideal for inverter applications.

*Typical value at Vgs=10V. *Typical value at Vgs/Id=5V/Id (max).

Bipolar Transistor series (strong discharge voltage/high-speed SW)
for power supply applications

— High breakdown resistance
— High-speed switching
— High avalanche breakdown resistance
— Low noise

Applications: DC/DC converters, motor drivers and strobe lights

This new bipolar transistor series provides a much higher breakdown resistance and switching speed than in conventional structures. The bipolar transistor series has small surface mount packages and are ideal for automotive and motor power supply applications.

*Performance of conventional ROHM products vs new products