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ROHM’s PicoLED™

Our PicoLED features the same level of brightness as conventional chip LEDs, but in a package size 53% smaller in area and with 74% less volume than standard 0603-sized products. This makes the PicoLED ideal for use in high-density applications.

Features: -Ultra compact (0.04in x 0.02in) - 53% smaller area and 74% less volume than conventional 0603 sized units. -High-luminosity types offered in a range of colors: red, orange, yellow, green, blue, and white. -All light-emitting elements are of the high reliability four-element (InGaAlP) or high luminosity (InGaN) type ensuring continuous, long-term, reliable operation.

Discretes: Diodes

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What is a Diode?

  1. Before the vacuum tube... Rectifying properties and the Edison effect were discovered in the two-pole vacuum tube 1884. But, actually eight years before that, the rectifying effect of selenium was discovered in 1876. The idea of using the properties of semiconductors to create diodes that possess rectifying effects is very old. It may be hard to believe, but the history of semiconductors dates back before that of the vacuum tube!
  2. From germanium to silicon The first primitive diodes, like the selenium rectifier or crystal detectors, used iron pyrites and galena and other natural copper oxides (polycrystalline semiconductors). After that, as refining techniques improved, we entered the age where highly sensitive single crystalline semiconductors could be produced with reliability-the age of germanium and silicon. Later we learned that germanium has a low resistance to heat, and so today, most all semiconductors are made with silicon.
  3. Rectification from the pn junction The diode element consists of a structure called the pn junction. The terminal attached to the p-type semiconductor is called the anode, and the terminal attached to the n-type semiconductor is called the cathode. Current is allowed to flow from the anode to the cathode, but almost completely prevented from flowing in the reverse direction. This phenomenon is called rectification, and, put simply, it converts alternating current to a unidirectional current.
  4. In other words, a diode is a valve! Think of the effects of a diode, you might call it a "valve"-a valve for electrical current. If you think of electrical current as flowing water, the anode could be considered the upstream side and the cathode the downstream side. Water flows from upstream to downstream, but the "valve" prevents it from flowing from downstream to upstream. This is the principle operation of a diode. .The valve is open and electricity flows (forward direction) .The valve is closed and electricity does not flow (reverse direction)
  5. The many types of junctions The current types of junctions in today's diodes can be divided into two main classifications: the pn junction and the Schottky barrier junction. The first one is a semiconductor-to-semiconductor junction, and this type of junction can be further classified into diffusion type junctions and mesatype junctions. The latter one uses the effects caused between a semiconductor and a metal and therefore is not actually called a junction in terms of diodes. However, to make things easier to understand, it will be considered a junction here. Currently, the Schottky barrier diode is known for its low power requirements and high speeds, and ROHM is making great advances with its Schottky barrier diode series.

Forward bias characteristics and reverse bias characteristics A diode has two electrodes: the anode and the cathode. The anode is the (+) terminal and the cathode is the (-) terminal. The characteristics of the diode when current is flowing from the anode to the cathode are called the forward bias characteristics and VF and IF are examples of these characteristics. Conversely, if a (-) voltage is applied to the anode and a (+) voltage is applied to the cathode, current is prevented from flowing through the diode. The characteristics at this time are called the reverse bias characteristics and VR and IR are examples of these characteristics.

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ROHM’s penchant for high quality is never more apparent than with diodes, the most fundamental of semiconductor devices. ROHM’s broad lineup is optimized to meet the needs of electronic devices and applications of all types.

Continued efforts are being made in the power sector, resulting in development of Schottky diodes with high voltage resistance ( 50V- 00V) and fast recovery diodes featuring high-speed response, low heat generation, low loss, and high voltage resistance (400V-600V). In the rapidly expanding car electronics market, ROHM offers bidirectional Zener diodes for ESD protection in LANs that decrease both the mounting area and the number of components required. Ultra-low capacitance Zener diodes are also available for high-speed digital signals and to provide ESD protection in the GHz range in HDMI devices, for example, with a target of 0. pF or less. Regarding package types, ROHM offers the smallest Schottky and Zener diodes in the market (060 size, 0.6x0. mm) for high density sets. DISCRETE SEMICONDUCTOR DEVICES Power MOSFETs Power Diodes PICOLEDTM 780nm band, high-output semiconductor laser

Diode - Zener ESD Protection

ESD Protection Diodes with 1pF Junction Capacitance

Applications
Rohm’s new line of ultra-low 1pF Zener diodes are ideal for protecting high-speed ports such as USB 2.0, DVI, High Definition Media Interface (HDMI), IEEE1394b/Firewire, and Serial ATA. Their small footprint makes them extremely well suited for space-sensitive voltage-regulation applications in portable communications and computing devices including cellular and cordless phones, Bluetooth products, digital cameras, MP3 players, notebook computers, and PDAs.

Key Features and Benefits
Rohm’s new line of ultra-low 1pF Zener diodes provide ±8kV or ±9kV contact protection (depending on the diode), per the IEC61000-4-2 Level 4 standard. All models use a diode clamp configuration optimized for minimal capacitance, while simultaneously providing excellent ESD protection with low clamping voltage levels. Benefits of this technology include:

— ESD protection of 8kV or 9kV contact, 15kV Air, per IEC61000-4-2 Level 4
— Industry’s lowest channel input capacitance (1pF typ.)
— Ultra-low channel I/O to GND capacitance difference (0.02 pF)
— Ultra-low channel-to-channel capacitance (0.8 pF)
— Low insertion loss (virtually zero up to 3 GHz)
— Clamping voltage less than 14V (Vbus + 9V)
— Sub-nanosecond response times
— Multi-strike capability
— Low-profile, small form-factor EDZ, VDZ, SOD, SOT, LL, and DO packages for space-constrained applications

 

Provides higher ESD protection than standard TVS products

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